Thermally stable Ge/Ag/Ni ohmic contact for InAlAs/InGaAs/InP HEMTs

IEEE Electron Device Letters

Volumn 27, Issue 1, 2006, Pages 4-6

  Zhao, Weifeng ^a   Kim, Seiyon ^a   Zhang, Jian ^a   Adesida, Ilesanmi ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

Annealed; Ge Ag Ni; High electron mobility transistors (HEMTs); InAlAs InGaAs; Ohmic contact; SiNx; Storage test; Thermal stability

Indexed keywords

METALLIZING; OHMIC CONTACTS; RAPID THERMAL ANNEALING; SEMICONDUCTING GERMANIUM; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

CONTACT RESISTANCE; CONTACT RESISTIVITY; STORAGE TEST;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33645468340     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.860381     Document Type: Article

References (12)

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