Denuded zone formation by conventional and rapid thermal anneals

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 73, Issue 1, 2000, Pages 106-110

  Kissinger, G ^a   Vanhellemont, J ^b   Obermeier, G ^b   Esfandyari, J ^b  

^a IHP   (Germany)

^b SILTRONIC AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; DIFFUSION; HYDROGEN; OXYGEN; PRECIPITATION (CHEMICAL); SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; SILICON WAFERS;

DENUDED ZONE; OXYGEN OUT DIFFUSION;

RAPID THERMAL ANNEALING;

EID: 0033871985     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00444-4     Document Type: Article

References (11)

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