Low-voltage Zn0.97Zr0.03O thin-film transistors incorporating high-k (Ba,Sr)TiO3 gate insulators deposited on BaRuO3(110) gate electrodes

Electrochemical and Solid-State Letters

Volumn 9, Issue 9, 2006, Pages

  Lee, Jen Hao ^a   Lin, Pang ^a   Ho, Jia Chong ^b   Lee, Cheng Chung ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; ELECTRODEPOSITION; ELECTRODES; PERMITTIVITY; SOL-GELS; THRESHOLD VOLTAGE;

GATE ELECTRODES; INTERFACE TRAP DENSITY; SUBTHRESHOLD SLOPE;

THIN FILM TRANSISTORS;

EID: 33746535570     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2217133     Document Type: Article

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