Effect of growth temperature on InAs wetting layer grown on (1 1 3)A GaAs by molecular beam epitaxy

Journal of Crystal Growth

Volumn 293, Issue 2, 2006, Pages 330-334

  Sfaxi, L ^a   Bouzaiene, L ^a   Sghaier, H ^a   Maaref, H ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

A1. RHEED; A1. Wetting layer; A3. MBE; A3. QDs; B1. (1 1 3)A GaAs substrate

Indexed keywords

CRYSTAL GROWTH; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; WETTING;

GROWTH TEMPERATURE; INAS; MAGNITUDE; WETTING LAYER;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33746433500     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.05.042     Document Type: Article

References (42)

1. Grundmann M. Physica E (Amsterdam) 5 (2000) 167 and references therein
2. Park G., Schekin O.B., Huffaker D.L., and Deppe D.G. Appl. Phys. Lett. 73 (1998) 3351
3. Weber A., Gauthier-Lafaye O., Julien F.H., Brault J., Gendry M., Desieres Y., and Benyattou T. Appl. Phys. Lett. 74 4 (1999) 13
4. Madhukar A., Xie Q., Chen P., and Konkar A. Appl. Phys. Lett. 64 (1994) 2727
5. Solomon G.S., Trezza J.A., and Harris J.S. Appl. Phys. Lett. 66 (1995) 991
6. Guo S.P., Shen A., Ohno Y., and Ohno H. Physica E (Amsterdam) 2 (1998) 672
7. Ren H.W., Nishi K., Sugou S., and Masumoto Y. Jpn. J. Appl. Phys. (Part 1) 37 (1998) 1548
8. Chu L., Arzberger M., Bohm G., and Abstreiter G. Jpn. J. Appl. Phys. (Part 1) 85 (1999) 2355
9. Saito H., Nishi K., and Sugou S. Appl. Phys. Lett. 74 (1999) 1224
10. Kissel H., Müller U., Walther C., Masselink W.T., Mazur Yu.L., Tarasov G.G., and Lisitsa M.P. Phys. Rev. B 62 (2000) 7213
11. Suekane O., Hasegawa S., Takata M., Okui T., and Nakkashima H. Mater. Sci. Eng. B 88 (2002) 158
12. Nakata Y., Mukai K., Sugawara M., Ohtsubo K., Ishikawa H., and Yokoyama N. J. Crystal Growth 208 (2003) 93
13. Yamaguchi K., Yujobo K., and Kaizu T. Jpn. J. Appl. Phys. (Part 2) 39 (2000) 1245
14. Solomon G.S., Trezza J.A., and Harris J.S. Appl. Phys. Lett. 66 (1995) 3161
15. Joce P.B., Krzyzewski T.J., Bell G.R., Jones T.S., Le Ru E.C., and Murray R. Phys. Rev. B 64 (2001) 2353
16. Joce B.A., Vedensky D.D., Bell G.R., Belk J.G., Itoh M., and Jones T.S. Mater. Sci. Eng. B 67 (1999) 7
17. Moison J.M., Houzay F., Barthe F., Leprince L., André W., and Vatel O. Appl. Phys. Lett. 64 (1996) 196
18. Leonard D., Pond K., and Petroff P.M. Phys. Rev. B 50 11 (1994) 687
19. da Silva M.J., Quiry A.J., Gonzalez-Borrero P.P., and Marega E. J. Crystal Growth 236 (2002) 41
20. Ren H.W., Nishi K., Sugou S., Sugisaki M., and Masumoto Y. Jpn. J. Appl. Phys. (Part 1) 36 (1997) 4118
21. Ilahi B., Sfaxi L., Bremond G., Hjiri M., and Maaref H. Phys. Stat. Sol. C 2 4 (2005) 1325
22. Platen J., Kley A., Setger C., Jacobi K., Ruggerone P., and Scheffer M. J. Appl. Phys. 85 (1998) 3597
23. Wang Z.M., Daweritz L., and Ploog K.H. Appl. Phys. Lett. 78 (2001) 712
24. Kiravittaya S., Songmuang R., Changmuang P., Sopitpan S., Ratanathammaphan S., Sawadsaringkarn M., and Panyakeow S. J. Crystal Growth 227 (2001) 1010
25. Temko Y., Suzuki T., and Jacobi K. Appl. Phys. Lett. 82 (2003) 13
26. Chang K., and Xia J.B. Solid State Commun. 104 (1997) 351
27. Boring P., Gil B., and Moore K. Phys. Rev. Lett. 71 (1993) 1875
28. Bouzaiene L., Rekaya S., Sghaier H., Sfaxi L., and Maaref H. Appl. Phys. A 80 (2005) 295
29. Bouzaiene L., Rekaya S., Sfaxi L., and Maaref H. Eur. Phys. J. Appl. Phys. 29 (2005) 209
30. Sghaier H., Bouzaiene L., Sfaxi L., and Maaref H. Sensors Actuators A 121 (2005) 95
31. Suzuki T., Temko Y., and Jacobi K. Phys. Rev. Lett. B 67 (2003) 045315
32. Budiman R.A., and Ruda H.E. J. Appl. Phys. 88 (2000) 4586
33. Sutter P., and Lagally M. Phys. Rev. Lett. 84 (2000) 4637
34. Tromp R.M., Ross F.M., and Reuter M.C. Phys. Rev. Lett. 84 (2000) 4641
35. Tersoff J., and LeGoues F.K. Phys. Rev. Lett. 72 (1994) 3570
36. Müller P., and Kern R. Surf. Sci. 457 (2000) 229
37. Spencer B.J., and Tersoff J. Phys. Rev. Lett. 79 (1997) 4858
38. S.N. Santalla, C. Kanyinda-Malu, R.M. de la Cruz, in: TNT2001 poster PB-34, http://www.cmp-cientifica.com
39. S.N. Santalla, C. Kanyinda-Malu, R.M. de la Cruz, in: Proceedings of the Joint COST Action P5 Workgroup Meeting on Individual and Assembled Nanoparticles and Quantum Dots, Leuven, 25-27 April 2002.
40. Santalla S.N., Kanyinda-Malu C., and de la Cruz R.M. J. Crystal Growth 253 (2003) 190
41. Nakajima K. Jpn. J. Appl. Phys. 38 (1999) 1875
42. Landau L., and Lifchitz E. Physique Statistique. third ed. (1984), Tome V, Mir, Moscou