Influence of high-index GaAs substrates on the 2D electron density of δ-doped pHEMT with an additional inxGa1-xas (x > 0.15) thin layer embedded in the channel

EPJ Applied Physics

Volumn 29, Issue 3, 2005, Pages 209-213

  Bouzaiene L ^a   Rekaya, S ^a   Sfaxi, L ^a   Maaref, H ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DOPING (ADDITIVES); ELECTRIC FIELDS; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; REFRACTIVE INDEX; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; THIN FILMS;

P-N JUNCTIONS; SEMICONDUCTOR-TO-SEMICONDUCTOR CONTACTS; STRAINED QUANTUM WELLS (SQW); SURFACE STATES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 14744279737     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2004219     Document Type: Article

References (17)

1. S.W. Chen, P.M. Smith, S.J. Liu, W.F. Kopp, T.J. Rogers, IEEE Microw. Guided W. 5, 201 (1995)
2. J.J. Brown et al., IEEE Microw. Guided W. 6, 91 (1996)
3. R. Grundbacher, A.A. Kettersonm, Y.C. Kao, I. Adesida, IEEE T. Electron Dev. 44, 2136 (1997)
4. M.H. Somerville, J.A. Del Alamom, P. Saunier, IEEE T. Electron Dev. 45, 1883 (1998)
5. P. Boring, B. Gil, K. Moore, Phys. Rev. Lett. 71, 1875 (1993)
6. P.O. Vaccaro, M. Takahashi, K. Fujita, T. Watanabe, Jpn J. Appl. Phys. 34, Part 2, L13 (1995)
7. H. Toyoshima, T. Niwa, J. Yamazaki, A. Okamoto, Appl. Phys. Lett. 63, 821 (1993)
8. O. Brandt et al., Phys. Rev. B 48, 17599 (1993)
9. P.O. Vaccaro, K. Tominaga, M. Hosoda, K. Fujita, T. Watanabe, Jpn J. Appl. Phys. 34, Part 1, 1362 (1995)
10. L. Konczewicz, B. Jouault, S. Contreras, M.L. Sadowski, J.L. Robert, S. Blanc, Ch. Fontaine, Phys. Stat. Sol. B 223, 507 (2001)
11. P. Ruden, G.H. Dohler, Phys. Rev. B 27, 3538 (1983)
12. A. Leuther, A. Föster, H. Lüth, H. Holzbercher, U. Breur, Semicond. Sci. Technol. 11, 766 (1996)
13. L. Bouzaïene, S. Rekaya, H. Sghaeïr, L. Sfaxi, H. Maaref, Appl. Phys. A 80, 295 (2005)
14. L. Bouzaïene, L. Sfaxi, H. Sghaeïr, H. Maaref, J. Appl. Phys. 85, 8223 (1999)
15. L. Bouzaïene, L. Sfaxi, H. Maaref, Microelectron. J. 30, 705 (1999)
16. J.W. Matthews, A.E. Blakeslee, J. Cryst. Growth 27, 118 (1974)
17. A. Polimeni, A. Patane, M. Henini, L. Eaves, P.C. Main, S. Sanguinetti, M. Guzzi, J. Cryst. Growth 201/202, 276 (1999)