InAs/GaAs self-organized quantum dots on (4 1 1)A GaAs by molecular beam epitaxy

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 1010-1015

  Kiravittaya, S ^a   Songmuang, R ^a   Changmuang, P ^a   Sopitpan, S ^a   Ratanathammaphan, S ^a   Sawadsaringkarn, M ^a   Panyakeow, S ^a  

^a CHULALONGKORN UNIVERSITY   (Thailand)

Author keywords

A1. Low dimensional structures; A1. Nanostructures; A1. Surface structure; A3. Molecular beam epitaxy; A3. Selective epitaxy

Indexed keywords

ATOMIC FORCE MICROSCOPY; EMISSION SPECTROSCOPY; GRAIN SIZE AND SHAPE; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; SURFACE STRUCTURE;

INDIUM ARSENIDE; SELECTIVE EPITAXY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035398657     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00978-2     Document Type: Conference Paper

References (10)