Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample

Journal of Crystal Growth

Volumn 236, Issue 1-3, 2002, Pages 41-45

  Da Silva, M J ^a   Quivy, A A ^a   Gonzalez Borrero P P ^a   Marega Jr , E ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

A1. Atomic force microscopy; A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting III V compounds; B2. Semiconducting indium compounds

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOSTRUCTURED MATERIALS; OPTIMIZATION; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

FILM THICKNESS; QUANTUM DOT DENSITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036499215     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02109-1     Document Type: Article

References (14)