Thermal annealing effects on photoluminescence properties of vertically stacked InAs/GaAs quantum dots with optimized spacer layer thickness

Physica Status Solidi C: Conferences

Volumn 2, Issue 4, 2005, Pages 1325-1330

  Ilahi, B ^a   Sfaxi, L ^a   Bremond, G ^b   Hjiri, M ^a   Maaref, H ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM COMPOUNDS; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS; THICKNESS MEASUREMENT;

FULL WIDTHS AT HALF MAXIMUM (FWHM); PHOTOLUMINESCENCE SPECTROSCOPY (PL); SPACER LAYER THICKNESSES;

INDIUM COMPOUNDS;

EID: 27344433414     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200460446     Document Type: Conference Paper

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