In-situ crystal growth monitoring using a CCD imaging system

Sensors and Actuators, A: Physical

Volumn 121, Issue 1, 2005, Pages 95-102

  Sghaier, Halim ^a   Bouzaiene, Laarbi ^a   Sfaxi, Lofti ^a   Maaref, Hassen ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

CCD imaging; MBE; Nanostructures; RHEED

Indexed keywords

CHARGE COUPLED DEVICES; DIGITAL VOLTMETERS; ENERGY GAP; EPITAXIAL GROWTH; HETEROJUNCTIONS; IMAGE PROCESSING; IMAGING SYSTEMS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS;

DIGITAL VOLTAGE; ELECTRON DIFFRACTIONS; GROWTH MONITORING; INTENSITY SIGNAL;

CRYSTAL GROWTH;

EID: 21744431753     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2004.12.001     Document Type: Article

References (24)

1. A.Y. Cho Twenty years of molecular beam epitaxy J. Cryst. Growth 150 1995 1 6
2. 4 molecules with Ga-rich GaAs (0 0 1) surfaces J. Cryst. Growth 98 1989 511 518
3. J. Zhang, A.K. Lees, A.G. Taylor, D. Raisbeck, N. Shukla, J.M. Fernandez, B.A. Joyce, and M.E. Pemble In-situ monitoring of Si and SiGe growth on Si(0 0 1) surfaces during gas source molecular beam epitaxy using reflectance anisotropy J. Cryst. Growth 164 1996 40 46
4. B. Etienne, and E. Paris Two-dimensional electron gas of very high mobility in planar doped heterostructures J. Phys. 48 1987 2049 2052
5. J.H. Neave, B.A. Joyce, P.J. Dobson, and N. Norton Dynamics of film growth of GaAs by MBE from RHEED observations Appl. Phys. A 31 1983 1 8
6. J.M. Van Hove, C.S. Lent, P.R. Pukite, and P.I. Cohen Damped oscillations in reflection high energy electron diffraction during GaAs MBE J. Vac. Sci. Technol. B1 1983 741 746
7. F. Turco, J. Massies, and J.P. Contour Application de la technique des oscillations d'intensite de diffraction electronique en incidence rasante a la croissance des semi-conducteurs III-V par epitaxie par jets moleculaires Rev. Phys. Appl. 22 1987 827 830
8. 1-x As on GaAs (0 0 1) J. Cryst. Growth 114 1991 693 699
9. H.C. Liu, M. Gao, J. McCaffrey, Z.R. Wasilewski, and S. Fafard Quantum dot infrared photodetector Appl. Phys. Lett. 78 1 2001 79 81
10. D.L. Huffaker, G. Park, Z. Zou, and D.G. Deppe 1.3 μm room-temperature GaAs-based quantum-dot laser Appl. Phys. Lett. 73 1998 2564 2566
11. A.E. Zhukov Continuous wave operation of long-wavelength quantum dot diode laser on a GaAs substrate IEEE Photonics Technol. Lett. 11 1999 1345 1347
12. Y.M. Shernyakov 1.3 μm GaAs-based laser using quantum dots obtained by activated spinodal decomposition Electron. Lett. 35 1999 898 900
13. G.T. Liu, A. Stintz, H. Li, T.C. Newell, A.L. Gray, P.M. Varangis, K.J. Malloy, and L.F. Lester The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures IEEE J. Quantum Electron. 36 2000 1272 1279
14. D.L. Huffaker, and D.G. Deppe Electroluminescence efficiency measurements of silicon nanostructures Appl. Phys. Lett. 73 1998 520 522
15. A. Fiore, U. Oesterle, R.P. Stanley, and M. Ilegems High-efficiency light-emitting diodes at ≈1.3 μm using InAs-InGaAs quantum dots IEEE Photonics Technol. Lett. 12 2000 1601 1603
16. J.X. Chen, U. Oesterle, A. Fiore, R.P. Stanley, M. Ilegems, and T. Todaro Matrix effects on the structural and optical properties of InAs quantum dots Appl. Phys. Lett. 79 2001 3681 3683
17. H. Drexler, D. Leonard, W. Hansen, J.P. Kotthaus, and P.M. Petroff Spectroscopy of quantum levels in charge-tunable InGaAs quantum dots Phys. Rev. Lett. 73 1994 2252 2255
18. V. Zwiller, H. Blom, L. Samuelson, and G. Bjork Single quantum dots emit single photon at a time: Antibunching experiments Appl. Phys. Lett. 78 2001 2476 2478
19. F. Ferdos, M. Sadeghi, Q.X. Zhao, S.M. Wang, and A. Larsson Optimization of MBE growth conditions for InAs quantum dots on (0 0 1) GaAs for 1.3 μm luminescence J. Cryst. Growth 227 2001 1140 1145
20. S. Fafard, Z.R. Wasilewski, and M. Spanner Evolution of the energy levels in quantum dot ensembles with different densities Appl. Phys. Lett. 75 1999 1866 1868
21. J.S. Kim, P.W. Yu, J.I. Lee, J.Su. Kim, S.G. Kim, J.Y. Leem, and M. Jeon Height-controlled InAs quantum dots by using a thin InGaAs layer Appl. Phys. Lett. 80 2002 4714 4716
22. M. Ilg, and K.H. Ploog Enhanced In surface segregation during molecular-beam epitaxy of (In, Ga)As on (h11) GaAs for small values of h Phys. Rev. B 48 1993 11512 11515
23. Q. Xie, A. Madhukar, P. Chen, and N.P. Kobayashi Vertically self-organized InAs quantum box islands on GaAs (100) Phys. Rev. Lett. 75 13 1995 2542 2545
24. H. Sghaier, L. Sfaxi, and H. Maaref Growth condition optimization by automatic control of the effusion cells' shutters Proceedings of the 11th European Workshop on MBE Hinterzarten, Austria 2001 139 140