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Volumn 36, Issue 6 B, 1997, Pages 4118-4122

Control of InAs self-assembled islands on GaAs vicinal surfaces by annealing in gas-source molecular beam epitaxy

Author keywords

Annealing; Atomic force microscopy; Gas source molecular beam epitaxy; InAs GaAs; Photoluminescence; Quantum dots; Self assembled islands

Indexed keywords


EID: 0000654016     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.4118     Document Type: Article
Times cited : (17)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.