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Volumn 80, Issue 2, 2005, Pages 295-299
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Piezoelectric field effects on electron density in a δ-doped AlGaAs/InyGa1-yAs/GaAs pseudomorphic HEMT
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
EIGENVALUES AND EIGENFUNCTIONS;
FERMI LEVEL;
HIGH ELECTRON MOBILITY TRANSISTORS;
PIEZOELECTRICITY;
POISSON EQUATION;
QUANTUM WELL LASERS;
SUBSTRATES;
EIGENENVELOPE WAVEFUNCTIONS;
PIEZOELECTRIC FIELD EFFECT;
PSEUDOMORPHIC HEMT;
SELF-CONSISTENT ANALYSIS;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 10644271627
PISSN: 09478396
EISSN: None
Source Type: Journal
DOI: 10.1007/s00339-003-2175-8 Document Type: Article |
Times cited : (8)
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References (17)
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