Fabrication of GaN-based striped structures along the 〈1120〉 direction by the combination of RIE dry-etching and KOH wet-etching techniques to recover dry-etching damage

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1624-1628

  Itoh, Morimichi ^a   Kinoshita, Toru ^a,c   Kawasaki, Koji ^a   Takeuchi, Misaichi ^a,b   Koike, Choshiro ^a   Aoyagi, Yoshinobu ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b RIKEN   (Japan)

^c TOKUYAMA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DRY/WET ETCHING; SINGLE HETEROSTRUCTURES; STRIPED STRUCTURE; 73.40.KP; 73.50.DN; 81.65.CF; 85.30.TV; IN-FIELD; IV CHARACTERISTICS; STRIPED STRUCTURES;

CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON MOBILITY; ETCHING; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; GALLIUM ALLOYS; GALLIUM NITRIDE; WET ETCHING;

GALLIUM NITRIDE; DRY ETCHING;

EID: 33746332664     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565392     Document Type: Conference Paper

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