A poly-Si gate carbon nanotube field effect transistor for high frequency applications

IEEE MTT-S International Microwave Symposium Digest

Volumn 2005, Issue , 2005, Pages 303-306

  Kim, Sunkook ^a   Choi, Tae Young ^b   Rabieirad, Laleh ^a   Jeon, Jong Hyeok ^a   Shim, Moonsub ^c   Mohammadi, Saeed ^a  

^a PURDUE UNIVERSITY   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

^c University of Illinois at Urbana Champaign   (United States)

Author keywords

Carbon nanotube; Field effect transistor; Nanotechnology; Poly silicon

Indexed keywords

CARBON NANOTUBE FIELD EFFECT TRANSISTOR; GATE LENGTH; HIGH FREQUENCY APPLICATIONS; OSCILLATION FREQUENCY;

CARBON NANOTUBES; ELECTRON TRANSITIONS; MICROWAVES; NANOTECHNOLOGY; NATURAL FREQUENCIES; OSCILLATORS (ELECTRONIC); POLYSILICON;

FIELD EFFECT TRANSISTORS;

EID: 33746302370     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2005.1516586     Document Type: Conference Paper

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