Surface potential mapping in the SiO2 system using a FET cantilever

Current Applied Physics

Volumn 6, Issue SUPPL. 1, 2006, Pages

  Suh, Moon Suhk ^a   Lee, Churl Seung ^a   Kim, Sung Hyun ^a   Lee, Kyoung Il ^a   Cho, Jin Woo ^a   Choi, Young Jin ^b   Shin, Jin Koog ^a  

^a Korea Electronic Technology Institute (KETI)   (South Korea)

^b Myong Ji University   (South Korea)

Author keywords

AFM; Cantilever; Contact mode; FET; Non contact mode; Surface potential

Indexed keywords

AMPLIFIERS (ELECTRONIC); ATOMIC FORCE MICROSCOPY; CANTILEVER BEAMS; CONFORMAL MAPPING; IMAGE ANALYSIS; SCANNING; SILICA;

CANTILEVERS; CONTACT MODES; NON-CONTACT MODES; SURFACE POTENTIAL;

FIELD EFFECT TRANSISTORS;

EID: 33746218179     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2006.01.045     Document Type: Article

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