Charge-imaging field-effect transistor

Applied Physics Letters

Volumn 79, Issue 8, 2001, Pages 1202-1204

  Chen, L H ^a   Topinka, M A ^a   LeRoy, B J ^a   Westervelt, R M ^a   Maranowski, K D ^b   Gossard, A C ^b  

^a HARVARD UNIVERSITY   (United States)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040927812     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1395516     Document Type: Article

References (14)

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12. To estimate the tip-channel capacitance, the tip and the channel were modeled as two metal spheres separated by a dielectric. The spheres have radii of the radius of curvature of the tip and the FWHM of the charge response, respectively.
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