Accurate measurement of composition, carrier concentration, and photoconductive lifetime in Hg i-xCd xTe grown by molecular beam epitaxy

Journal of Electronic Materials

Volumn 35, Issue 6, 2006, Pages 1360-1368

  Swartz, C H ^a   Chandril, S ^a   Tompkins, R P ^a   Giles, N C ^a   Myers, T H ^a   Edwall, D D ^b   Piquette, E G ^b   Kim, C S ^c   Vurgaftman, I ^c   Meyer, J R ^c  

^a WEST VIRGINIA UNIVERSITY   (United States)

^b ROCKWELL SCIENTIFIC COMPANY   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Arsenic; Doping; Indium; Multiple carrier fitting; Quantitative mobility spectrum analysis; Variable magnetic field Hall

Indexed keywords

DOPING; MULTIPLE CARRIER FITTING; QUANTITATIVE MOBILITY SPECTRUM ANALYSIS; VARIABLE MAGNETIC FIELD HALL;

CADMIUM; CARRIER CONCENTRATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY; SEMICONDUCTING TELLURIUM;

MERCURY (METAL);

EID: 33746216355     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0269-8     Document Type: Conference Paper

References (28)

1. T.H. Myers et al., J. Electron. Mater. 33, 728 (2004).
2. Y. Nemirovsky, R. Fastow, M. Meyassed, and A. Unikovsky, J. Vac. Sci. Technol. B 9, 1829 (1991).
3. M.B. Reine, K.R. Maschhoff, S.P. Tobin, P.W. Norton, J.A. Mroczkowski, and E.E. Krueger, Semicond. Sci. Technol. 8, 788 (1993).
4. D.D. Edwall, E.C. Piquette, J. Ellsworth, J. Arias, C.H. Swartz, L. Bai, R.P. Tompkins, N.C. Giles, T.H. Myers, and M. Berding, J. Electron. Mater. 33, 752 (2004).
5. L.J. van der Pauw, Philips Tech. Rev. 20, 220 (1958).
6. J.R. Meyer, C.A. Hoffman, F.J. Bartoli, D.A. Arnold, S. Sivananthan, and J.P. Faurie, Semicond. Sci. Technol. 8, 805 (1993).
7. I. Vurgaftman, J.R. Meyer, C.A. Hoffman, D. Redfern, J. Antoszewski, L. Faraone, and J.R. Lindemuth, J. Appl. Phys. 84, 4966 (1998).
8. S. Krishnamurthy, M.A. Berding, Z.G. Yu, C.H. Swartz, T.H. Myers, D.D. Edwall, and R. Dewames, J. Electron. Mater. 34, 873 (2005).
9. S.R. Kurtz, J. Bajaj, D.D. Edwall, and S.J.C. Irvine, Semicond. Sci. Technol. 8, 941 (1993).
10. C.H. Swartz, R.P. Tompkins, N.C. Giles, T.H. Myers, H. Lu, W.J. Schaff, and L.F. Eastman, J. Cryst. Growth 269, 29 (2004).
11. F. Aqariden, H.D. Shih, M.A. Kinch, and H.F. Schaake, Appl. Phys. Lett. 78, 3481 (2001).
12. See, for example: M.C. Chen and L. Colombo, J. Appl. Phys. 72, 4761 (1992).
13. M.A. Kinch, F. Aqariden, D. Chandra, P.-K. Liao, H.F. Schaake, and H.D. Shih, J. Electron. Mater. 34, 880 (2005).
14. S. Krishnamurthy, M. Berding, and Z.G. Yu, in this issue.
15. M.A. Kinch, F. Aqariden, D. Chandra, P.-K. Liao, H.F. Schaake, and H.D. Shih, J. Electron. Mater. 34, 880 (2005).
16. A.R. Seattle and P.T. Landsberg, Proc. R. Soc. A249, 16 (1959).
17. J.S. Blakemore, Semiconductor Statistics (New York: Pergamon Press, 1962), p. 216.
18. Y. Chang, C.H. Grein, J. Zhao, S. Sivananthan, M.E. Flatte, P.-K. Liao, and F. Aqariden (Presentation at the 2005 U.S. Workshop on the Chemistry and Physics of II-VI Materials, Cambridge, MA, 20-22 September 2005).
19. A.R. Beattie and A.M. White, J. Appl. Phys. 79, 802 (1996).
20. R.G. Humphreys, Infrared Phys. 23, 171 (1983).
21. C.D. Maxey, C.L. Jones, N.E. Metcalfe, R.A. Catchpole, N.T. Gordon, A.M. White, and C.T. Elliot, Proc. SPIE 3122, 453 (1977).
22. P. Mitra, T.R. Schimert, F.C. Case, S.L. Barnes, M.B. Reine, R. Starr, M.H. Weiler, and M. Kestigian, J. Electron. Mater. 24, 1077 (1995).
23. M. Bevan, Appl. Phys. Lett. 67, 3650 (1995).
24. T. Tung, J. Cryst. Growth 86, 161 (1988).
25. D. Chandra, D.F. Weirauch, H.F. Schaake, M.A. Kinch, F. Auariden, C.F. Wan, and H.D. Shih, J. Electron. Mater. 34, 963 (2005).
26. O.K. Wu, G.S. Kamath, W.A. Radford, P.R. Bratt, and E.A. Patten, J. Vac. Sci. Technol. A 8, 1034 (1990).
27. A.C. Chen, M. Zandian, D.D. Edwall, R.E. De Wames, P.S. Wijewarnasuriya, J.M. Arias, S. Sivananthan, M. Berding, and A. Sher, J. Electron. Mater. 27, 595 (1998).
28. R. Pal, V. Gopal, P.K. Chaudhury, B.L. Sharma, P.K. Basu, O.P. Agnihotri, and V. Kumar, J. Electron. Mater. 30, 103 (2001).