An analytic approximation with a wide range of applicability for electron initiated Auger transitions in narrow-gap semiconductors

Journal of Applied Physics

Volumn 79, Issue 2, 1996, Pages 802-813

  Beattie, A R ^a   White, A M ^b  

^a Lower Leanassie   (United Kingdom)

^b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001335767     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360828     Document Type: Article

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