Minority carrier lifetime in p-HgCdTe

Journal of Electronic Materials

Volumn 34, Issue 6, 2005, Pages 880-884

  Kinch, M A ^a   Aqariden, F ^a   Chandra, D ^a   Liao, P K ^a   Schaake, H F ^a   Shih, H D ^a  

^a DRS Sensors and Targeting Systems Inc   (United States)

Author keywords

Carrier lifetime; HgCdTe; High operating temperature; Long wave infrared (LWIR); Midwave infrared (MWIR); P type

Indexed keywords

ARSENIC; COOLING; DATA REDUCTION; ELECTRIC CONDUCTANCE; ELECTRIC FIELD EFFECTS; FABRICATION; IONIZATION; PHOTOCONDUCTIVITY; PHOTODIODES;

CARRIER LIFETIME; HGCDTE; HIGH OPERATING TIMES; LONG WAVE INFRARED (LWIR); MIDWAVE INFRARED (MWIR); P-TYPE;

MERCURY COMPOUNDS;

EID: 21644452673     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0036-2     Document Type: Conference Paper

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