Growth of very low arsenic-doped HgCdTe

Journal of Electronic Materials

Volumn 34, Issue 6, 2005, Pages 963-967

  Chandra, D ^a   Weirauch, D F ^a   Schaake, H F ^a   Kinch, M A ^a   Aqariden, F ^a   Wan, C F ^a   Shih, H D ^a  

^a DRS Sensors and Targeting Systems Inc   (United States)

Author keywords

As; Doping; HgCdTe

Indexed keywords

ANNEALING; ARSENIC; CONCENTRATION (PROCESS); EPITAXIAL GROWTH; FUNCTIONS; HIGH TEMPERATURE APPLICATIONS; IMPURITIES; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

AMPHOTERIC IMPURITIES; DIODE STRUCTURE; HGCDTE; HIGH OPERATING TEMPERATURE (HOT);

MERCURY COMPOUNDS;

EID: 21644461134     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0051-3     Document Type: Conference Paper

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