Study of interface traps from transient photoconductive decay measurements in passivated HgCdTe

Journal of Electronic Materials

Volumn 30, Issue 2, 2001, Pages 103-108

  Pal, R ^a,c   Gopal, V ^a   Chaudhury, P K ^a   Sharma, B L ^a   Basu, P K ^a   Agnihotri, O P ^b   Kumar, V ^a  

^a SOLID STATE PHYSICS LABORATORY   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^c UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANODIC OXIDATION; CARRIER CONCENTRATION; HOLE TRAPS; INTERFACES (MATERIALS); MERCURY COMPOUNDS; PASSIVATION; PHOTOCONDUCTIVITY; PHOTOLYSIS;

MERCURY CADMIUM TELLURIDE;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0035251590     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-001-0108-x     Document Type: Article

References (9)

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