Molecular beam epitaxy growth of high-quality arsenic-doped HgCdTe

Journal of Electronic Materials

Volumn 33, Issue 6, 2004, Pages 752-756

  Edwall, D ^a   Piquette, E ^a   Ellsworth, J ^a   Arias, J ^a   Swartz, C H ^b   Bai, L ^b   Tompkins, R P ^b   Giles, N C ^b   Myers, T H ^b   Berding, M ^c  

^a ROCKWELL SCIENTIFIC COMPANY   (United States)

^b WEST VIRGINIA UNIVERSITY   (United States)

^c SRI INTERNATIONAL   (United States)

Author keywords

Activation anneal; As doping; HgCdTe; Molecular beam epitaxy (MBE)

Indexed keywords

ANNEALING; ARSENIC; DOPING (ADDITIVES); EPITAXIAL GROWTH; HALL EFFECT; HIGH TEMPERATURE EFFECTS; MERCURY COMPOUNDS; PHOTOLUMINESCENCE; RESONANCE; SPECTRUM ANALYSIS;

ACTIVATION ANNEALING; AS DOPING; QUANTITATIVE MOBILITY SPECTRUM ANALYSIS (QMSA); SUBLATTICES;

MOLECULAR BEAM EPITAXY;

EID: 3042758877     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0077-y     Document Type: Conference Paper

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