Model for minority carrier lifetimes in doped HgCdTe

Journal of Electronic Materials

Volumn 34, Issue 6, 2005, Pages 873-879

  Krishnamurthy, S ^a   Berding, M A ^a   Yu, Z G ^a   Swartz, C H ^b   Myers, T H ^b   Edwall, D D ^c   DeWames, R ^c  

^a SRI INTERNATIONAL   (United States)

^b WEST VIRGINIA UNIVERSITY   (United States)

^c ROCKWELL SCIENTIFIC COMPANY   (United States)

Author keywords

Fermi Dirac statistics; HgCdTe; Minority carrier lifetimes; Shockley Read Hall; Trap states

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; DOPING (ADDITIVES); FERMI LEVEL; HALL EFFECT; HAMILTONIANS; HEAT CONDUCTION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PERTURBATION TECHNIQUES;

FERMI-DIRAC STATISTICS; HGCDTE; MINORITY CARRIER LIFETIMES; SHOCKLEY-READ-HALL; TRAP STATES;

MERCURY COMPOUNDS;

EID: 21644487397     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0035-3     Document Type: Conference Paper

References (20)

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