MBE growth and characterization of in situ arsenic doped HgCdTe

Journal of Electronic Materials

Volumn 27, Issue 6, 1998, Pages 595-599

  Chen, A C ^a   Zandian, M ^a   Edwall, D D ^a   De Wames, R E ^a   Wijewarnasuriya, P S ^a   Arias, J M ^a   Sivananthan, S ^b   Berding, M ^c   Sher, A ^c  

^a ROCKWELL SCIENCE CENTER   (United States)

^b UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^c SRI INTERNATIONAL   (United States)

Author keywords

Arsenic doping; HgCdTe; Molecular beam epitaxy (MBE); P type doping

Indexed keywords

EID: 0344165605     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0021-7     Document Type: Article

References (16)

1. D.D. Edwall, M. Zandian, A.C. Chen and J.M. Arias, J. Electron. Mater. 26, 493 (1997).
2. R.D. Rajavel, D.M. Jamba, O.K. Wu, J.A. Wilson, E. Patten, K. Kosai, J. Rosbeck, P. Goetz, J. Johnson and S.M. Johnson, J. Electron. Mater. 26, 476 (1997).
3. J. Bonnet-Gamard, J. Bleuse, N. Magnea and J.L. Pautrat, J. Cryst. Growth 159, 613 (1996).
4. M. Zandian, A.C. Chen, D.D. Edwall, J. Pasko and J.M. Arias, to be published in Appl. Phys. Lett.
5. S. Sivananthan, P.S. Wijewarnasuriya, F. Aqariden, H.R. Vydyanath, M. Zandian, D.D. Edwall and J.M. Arias, J. Electron. Mater. 26, 621 (1997).
6. P.S. Wijewarnasuriya, I.K. Sou, J. Kim, K.K. Mahavadi, S. Sivananthan, M. Boukerche and J.P. Faurie, Appl. Phys. Lett. 51, 2045 (1987).
7. J.M. Arias, S.H. Shin, D.E. Cooper, M. Zandian, J.G. Pasko, E.R. Gertner, R.E. DeWames and J. Singh, J. Vac. Sci. Technol. A 8, 1025 (1990).
8. O.K. Wu, D.N. Jamba and G.S. Kamath, J. Cryst. Growth 127, 365 (1993).
9. R.D. Rajavel, D. Jamba, O.K. Wu, J.A. Roth, P.D. Brewer, J.E. Jensen, C.A. Cockrum, G.M. Venzor and S.M. Johnson. J. Electron. Mater. 25, 1411 (1996).
10. J.S. Chen, U. S. Patent, No. 4897152, (Jan. 30, 1990).
11. H.R. Vydyanath, J.A. Ellsworth and C.M. Devaney, J. Electron. Mater. 16, 13 (1987).
12. E.R. Gertner (unpublished data).
13. O.K. Wu, G.S. Kamath, W.A. Radford, P.R. Bratt and E.A Patten, J. Vac. Sci. Technol. A 8, 1034 (1990).
14. S.K. Ghandi, N.R. Taskar, K.K. Parat, D. Terry and I. Bhat, Appl. Phys. Lett. 53, 1641 (1988).
15. T. Tung, J. Cryst. Growth 86, 161 (1988).
16. L.O. Bubulac, D.D. Edwall and C.R. Viswanathan, J. Vac. Sci Technol. B 9, 1695 (1991).