Heteroepitaxial growth of GaN on atomically flat LiTaO3 (0 0 0 1) using low-temperature AIN buffer layers

Journal of Crystal Growth

Volumn 293, Issue 1, 2006, Pages 22-26

  Tsuchiya, Y ^a   Kobayashi, A ^b   Ohta, J ^b,c   Fujioka, H ^b,c   Oshima, M ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

A3. Laser epitaxy; B1. Nitrides

Indexed keywords

EPITAXIAL GROWTH; LITHIUM COMPOUNDS; LOW TEMPERATURE OPERATIONS; PULSED LASER DEPOSITION; SEMICONDUCTING FILMS; SUBSTRATES;

CRYSTAL ORIENTATION DISTRIBUTION; INTERFACIAL LAYER THICKNESS; LT-ALN BUFFER LAYERS; X-RAY REFLECTIVITY MEASUREMENTS;

GALLIUM NITRIDE;

EID: 33746151226     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.05.006     Document Type: Article

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