Room-temperature epitaxial growth of GaN on lattice-matched ZrB2 substrates by pulsed-laser deposition

Applied Physics Letters

Volumn 87, Issue 22, 2005, Pages 1-3

  Kawaguchi, Y ^a   Ohta, J ^a,b   Kobayashi, A ^a   Fujioka, H ^a,b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; CRYSTAL LATTICES; EPITAXIAL GROWTH; GROWTH KINETICS; HIGH ENERGY ELECTRON DIFFRACTION; PULSED LASER DEPOSITION; SUBSTRATES; THERMAL EFFECTS; ZIRCONIUM COMPOUNDS;

DIFFRACTION MEASUREMENTS; FILM THICKNESSES; HETEROINTERFACES; LAYER-BY-LAYER MODES;

GALLIUM NITRIDE;

EID: 27944502481     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2137876     Document Type: Article

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