Room-temperature Coulomb blockade effect in silicon quantum dots in silicon nitride films

Applied Physics Letters

Volumn 89, Issue 1, 2006, Pages

  Cho, Chang Hee ^a   Kim, Baek Hyun ^a   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL RESOLVING POWER; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; SILICON NITRIDE; TEMPERATURE MEASUREMENT; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

COULOMB STAIRCASE; ROOM TEMPERATURE; SILICON QUANTUM DOTS (SI QD); SINGLE ELECTRON ADDITION ENERGY;

COULOMB BLOCKADE;

EID: 33745795081     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2219722     Document Type: Article

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