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Volumn 73, Issue 14, 1998, Pages 1982-1984

Single-electron effects in slim semiconductor superlattices

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0242421247     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122342     Document Type: Article
Times cited : (2)

References (25)
  • 13
    • 0004215752 scopus 로고
    • See, also edited by World Scientific, Singapore
    • See, also, Semiconductor Superlattices, edited by H. T. Grahn (World Scientific, Singapore, 1995).
    • (1995) Semiconductor Superlattices
    • Grahn, H.T.1
  • 16
    • 21544444128 scopus 로고    scopus 로고
    • private communication
    • D. V. Averin (private communication).
    • Averin, D.V.1
  • 17
    • 21544464263 scopus 로고    scopus 로고
    • note
    • The gap width is larger if the electrons are injected from the top contact into the SL (V<0). We ascribe this asymmetry to the stronger lateral confinement of the top contact layer compared with the bottom one, which was not etched through completely during the pillar fabrication.
  • 18
    • 21544468000 scopus 로고    scopus 로고
    • note
    • c.
  • 19
    • 21544467551 scopus 로고    scopus 로고
    • note
    • g≈350mV (not shown).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.