Comparative study of trap-limited hydrogen diffusion in amorphous SiC, Si0.66C0.33N1.33, and SiN1.33 films

Journal of Physics Condensed Matter

Volumn 18, Issue 23, 2006, Pages 5363-5370

  Schmidt, H ^a   Borchardt, G ^a   Geckle, U ^b   Bruns, M ^b   Baumann, H ^c  

^a CLAUSTHAL UNIVERSITY OF TECHNOLOGY   (Germany)

^b KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

^c GOETHE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS FILMS; DEUTERIUM; DIFFUSION; HYDROGEN; MAGNETRON SPUTTERING; SECONDARY ION MASS SPECTROMETRY;

HYDROGEN TRACER; TRACER ISOTOPES; TRAP-LIMITED DIFFUSION;

SILICON CARBIDE;

EID: 33745781510     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/18/23/009     Document Type: Article

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