Migration of ion implanted hydrogen in amorphous and polycrystalline Si3N4:H Films: Experiments and numerical simulations

Defect and Diffusion Forum

Volumn 237-240, Issue PART 1, 2005, Pages 566-571

  Schmidt, H ^a   Borchardt, G ^a  

^a CLAUSTHAL UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Hydrogen; Ion implantation; Silicon nitride films; Trap limited diffusion

Indexed keywords

AMORPHOUS SILICON; COMPUTER SIMULATION; DIFFUSION; HYDROGEN; MAGNETRON SPUTTERING; POLYSILICON; SECONDARY ION MASS SPECTROMETRY; THIN FILMS;

SILICON NITRIDE FILMS; TRAP-LIMITE DIFFUSION;

ION IMPLANTATION;

EID: 30744438607     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.237-240.566     Document Type: Conference Paper

References (4)

1. H. Schmidt, W. Gruber, G. Borchardt, M. Bruns, M. Rudolphi, H. Baumann: J. Phys.: Condens. Matter 16 (2004), p. 4233.
2. H. Schmidt, W. Gruber, G. Borchardt, M. Bruns, M. Rudolphi, H. Baumann: Thin Solid Films 450 (2004), p. 344.
3. J. Pearton, W. Corbett, M. Stavola: Hydrogen in Crystalline Semiconductors (Springer, Berlin, 1991), p. 200.
4. J. F. Ziegler, J. P. Biersack, U. Littmark: The Stopping and Range of Ions in Solids, (Pergamon Press, Oxford, 1985).