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Volumn 206-207, Issue , 2002, Pages 19-29

Modelling amorphous materials: Silicon nitride and silicon carbide

Author keywords

Atomistic Simulations; Silicon Carbide; Silicon Nitride

Indexed keywords

COMPUTER SIMULATION; CRYSTAL STRUCTURE; ELECTRONIC PROPERTIES; HYDROGEN; SILICON CARBIDE; SILICON NITRIDE;

EID: 0036431644     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.206-207.19     Document Type: Conference Paper
Times cited : (4)

References (60)
  • 43
    • 0032591635 scopus 로고    scopus 로고
    • Multiscale modeling of materials, edited by V. Bulatov, T.D. de la Rubia, N. Ghoniem, and E. Kaxiras (Materials Research Society, Pittsburgh, PA)
    • J.F. Justo, F. de Brito Mota, and A. Fazzio, in Multiscale modeling of materials, edited by V. Bulatov, T.D. de la Rubia, N. Ghoniem, and E. Kaxiras MRS Symposia Proceedings No. 538 (Materials Research Society, Pittsburgh, PA, 1999) pp. 555-560.
    • (1999) MRS Symposia Proceedings , vol.538 , pp. 555-560
    • Justo, J.F.1    De Brito Mota, F.2    Fazzio, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.