Thin-film transistors based on hot-wire amorphous silicon on silicon nitride

Materials Research Society Symposium - Proceedings

Volumn 557, Issue , 1999, Pages 659-664

  Stannowski, B ^a   Meiling, H ^a   Brockhoff, A M ^a   Schropp, R E I ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELD EFFECTS; FILM GROWTH; GLOW DISCHARGES; SILICA; SILICON NITRIDE; STRESSES; THRESHOLD VOLTAGE;

FIELD EFFECT MOBILITY; GATE VOLTAGE STRESS; HOT WIRE AMORPHOUS SILICON; STRESS TIME;

THIN FILM TRANSISTORS;

EID: 0033297392     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-557-659     Document Type: Article

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