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Volumn 93, Issue 1-3, 2003, Pages 519-525

H2 sensing properties and mechanism of anodically oxidized TiO2 film contacted with Pd electrode

Author keywords

Anodic oxidation; Diode type sensor; H2 sensing in N2 atmosphere; Pd electrode; PdO; Schottky barrier; Sub micron pores; TiO2 thin film

Indexed keywords

ANODIC OXIDATION; DISSOLUTION; ELECTRODES; FILM PREPARATION; HYDROGEN; INTERFACES (MATERIALS); PALLADIUM; SCHOTTKY BARRIER DIODES; THIN FILMS; TITANIUM DIOXIDE;

EID: 0037773360     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(03)00181-3     Document Type: Conference Paper
Times cited : (95)

References (8)
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  • 3
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    • Metal-semiconductor junctions for the detection of reducing gases and the mechanism of the electrical presponse
    • in Japanese
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    • (1980) Nippon Kagaku Kaishi , vol.1980 , pp. 1585-1590
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  • 6
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    • Formation of catalytic Pd on ZnO thin films for electroless metal deposition
    • Sun R.D., Tryk D.A., Hashimoto K., Fujishima A. Formation of catalytic Pd on ZnO thin films for electroless metal deposition. J. Electrochem. Soc. 145:1998;3378-3382.
    • (1998) J. Electrochem. Soc. , vol.145 , pp. 3378-3382
    • Sun, R.D.1    Tryk, D.A.2    Hashimoto, K.3    Fujishima, A.4
  • 7
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    • Prediction of flatband potentials at semiconductor-electrolyte interfaces from atomic electronegativities
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    • (1978) J. Electrochem. Soc. , vol.125 , pp. 228-232
    • Butler, M.A.1    Ginley, D.S.2
  • 8
    • 0024091105 scopus 로고
    • Electronic interaction between metal additives and tin dioxide in tin dioxide-based gas sensors
    • Matsushima S., Teraoka Y., Miura N., Yamazoe N. Electronic interaction between metal additives and tin dioxide in tin dioxide-based gas sensors. Jpn. J. Appl. Phys. 27:1988;1798-1802.
    • (1988) Jpn. J. Appl. Phys. , vol.27 , pp. 1798-1802
    • Matsushima, S.1    Teraoka, Y.2    Miura, N.3    Yamazoe, N.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.