Low temperature epitaxial growth of In0.25Ga0.75N on lattice-matched ZnO by pulsed laser deposition

Journal of Applied Physics

Volumn 99, Issue 12, 2006, Pages

  Kobayashi, Atsushi ^a   Ohta, Jitsuo ^a,b   Fujioka, Hiroshi ^a,b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; DEFECTS; DEPOSITION; EPITAXIAL GROWTH; MONOLAYERS; SUBSTRATES;

ATOMICALLY FLAT SURFACES; LATTICE MISMATCH; LOW SUBSTRATE TEMPERATURES;

INDIUM COMPOUNDS;

EID: 33745685328     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2206883     Document Type: Article

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