Growth and characterization of SiC layers obtained by microwave-CVD

Thin Solid Films

Volumn 383, Issue 1-2, 2001, Pages 169-171

  Mandracci, P ^a   Ferrero, S ^a   Cicero, G ^a   Giorgis, F ^a   Pirri, C F ^a   Barucca, G ^b   Reitano, R ^c   Musumeci, P ^c   Calcagno, L ^c   Foti, G ^c  

^a POLITECNICO DI TORINO   (Italy)

^b 60131   (Italy)

^c UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; HIGH TEMPERATURE OPERATIONS; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; SEMICONDUCTING FILMS; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

MICRO-RAMAN SPECTROSCOPY;

SILICON CARBIDE;

EID: 0035246806     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01598-4     Document Type: Article

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