Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures

Electrochemical and Solid-State Letters

Volumn 8, Issue 1, 2005, Pages

  Ng, C Y ^a   Chen, T P ^a   Liu, Y ^a   Tse, M S ^a   Gui, D ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICES; GATE ELECTRODES; MEMORY CELLS; SILICON NANOCRYSTALS;

ANNEALING; CAPACITANCE; HEATING; MOS DEVICES; SECONDARY ION MASS SPECTROMETRY; SILICA; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION; X RAY DIFFRACTION ANALYSIS;

NANOSTRUCTURED MATERIALS;

EID: 12344254947     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1830392     Document Type: Article

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