Single-electron MOS memory with a defined quantum dot based on conventional VLSI technology

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4 B, 2002, Pages 2606-2610

  Sung, Suk Kang ^a,b   Kim, Dae Hwan ^a,b   Sim, Jae Sung ^a,b   Kim, Kyung Rok ^a,b   Lee, Yong Kyu ^b   Lee, Jong Duk ^a,b   Chae, Soo Doo ^c   Kim, Byung Man ^c   Park, Byung Gook ^a,b  

^a Seoul National University   (South Korea)

^b Seoul National University   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Discrete electron injection; EB lithography; Quantized threshold voltage shift; Quantum dot; Sidewall patterning technique; Single electron memory

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ELECTRONS; SEMICONDUCTOR QUANTUM DOTS; THRESHOLD VOLTAGE; VLSI CIRCUITS;

DISCRETE ELECTRON INJECTION; QUANTIZED THRESHOLD VOLTAGE SHIFT; SIDEWALL PATTERNING TECHNIQUE; SINGLE-ELECTRON MEMORY;

MOS CAPACITORS;

EID: 3042734594     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.2606     Document Type: Article

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