Self-limiting laser thermal process for ultra-shallow junction formation of 50-nm gate CMOS

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 493-496

  Shima, Akio ^a   Ashihara, Hiroshi ^a   Mine, Toshiyuki ^a   Goto, Yasushi ^a   Horiuchi, Masatada ^a   Wang, Yun ^b   Talwar, Somit ^b   Hiraiwa, Atsushi ^a  

^a HITACHI LTD   (Japan)

^b Ultratech Stepper Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXCIMER LASERS; FABRICATION; GATES (TRANSISTOR); HEATING; LASER PULSES; MATHEMATICAL MODELS; MOSFET DEVICES; RAPID THERMAL ANNEALING; SEMICONDUCTOR JUNCTIONS; SWITCHING;

LASER THERMAL PROCESS (LTP); PHASE SWITCHING TEMPERATURES;

CMOS INTEGRATED CIRCUITS;

EID: 0842266590     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. S.Talwar, et.al., Proc. SPIE, p.74, 1998.
2. B.Yu, et.al., IEDM Tech. Digest, p.509, 1999.
3. T.Yamamoto, et.al., Symp.on VLSI Tech., p. 138, 2002.
4. R.Murto,et.al., Proc. Int.Conf. Ion Imp.Tech,p.182, 2000.
5. S.D.Kim, et.al., IEEE Trans. Electron Devices, vol.49, p. 1748, 2002