Suppression of structural imperfection in strained Si by utilizing SiGe bulk substrate

Applied Physics Letters

Volumn 88, Issue 22, 2006, Pages

  Usami, N ^a   Nose, Y ^a   Fujiwara, K ^a   Nakajima, K ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; HETEROJUNCTIONS; RAMAN SCATTERING; SILICON COMPOUNDS; SUBSTRATES; X RAY ANALYSIS;

BULK CRYSTALS; ORIENTATION FLUCTUATION; SPACE MAPPING; STRUCTURAL IMPERFECTION;

SILICON;

EID: 33744798467     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2208928     Document Type: Article

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