Growth of SixGe1-x (x ≒ 0.15) bulk crystal with uniform composition utilizing in situ monitoring of the crystal-solution interface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 6 A, 2001, Pages 4141-4144

  Usami, N ^a   Azuma, Y ^a   Ujihara, T ^a   Sazaki, G ^a   Miyashita, S ^a   Murakami, Y ^a   Nakajima, K ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Bulk crystal; In situ monitoring; Multicomponent zone melting method; SiGe

Indexed keywords

BAND STRUCTURE; CRYSTAL GROWTH; ELECTRON MOBILITY; INTERFACES (MATERIALS); POLYCRYSTALLINE MATERIALS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SINGLE CRYSTALS;

CRYSTAL-SOLUTION INTERFACE; MULTICOMPONENT ZONE-MELTING METHOD;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0035359107     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.4141     Document Type: Article

References (15)