Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals

Journal of Crystal Growth

Volumn 240, Issue 3-4, 2002, Pages 373-381

  Nakajima, Kazuo ^a   Kusunoki, Toshihiro ^b   Azuma, Yukinaga ^a   Usami, Noritaka ^a   Fujiwara, Kozo ^a   Ujihara, Toru ^a   Sazaki, Gen ^a   Shishido, Toetsu ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

A1. Heterostructure; A2. Bridgman method; A2. Growth from melt; A2. Single crystal growth; B1. Germanium silicon alloys

Indexed keywords

COMPOSITION EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; ZONE MELTING;

COMPOSITIONAL VARIATIONS;

CRYSTAL GROWTH FROM MELT;

EID: 0036570498     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)00940-5     Document Type: Article

References (23)