Growth of SiGe bulk crystals with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature

Journal of Crystal Growth

Volumn 250, Issue 3-4, 2003, Pages 298-304

  Azuma, Y ^a   Usami, N ^a   Ujihara, T ^a   Fujiwara, K ^a   Sazaki, G ^a   Murakami, Y ^a   Nakajima, K ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Control of growth temperature; A1. Feedback control; A1. In situ monitoring; A2. Growth from melt; B1. Germanium silicon alloys; B1. Multicomponent substrate for heterostructures

Indexed keywords

FEEDBACK CONTROL; LATTICE CONSTANTS; PHASE DIAGRAMS; SILICON ALLOYS;

IN SITU MONITORING;

CRYSTAL GROWTH FROM MELT;

EID: 0037399523     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02400-4     Document Type: Conference Paper

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