Low temperature buffer growth for modulation doped SiGe/Ge/SiGe heterostructures with high hole mobility

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 320-323

  Ueno, Tetsuji ^a   Irisawa, Toshifumi ^a   Shiraki, Yasuhiro ^a   Uedono, Akira ^b   Tanigawa, Shoichiro ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; COMPOSITION EFFECTS; HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; RELAXATION PROCESSES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS; SURFACE ROUGHNESS; TRANSPORT PROPERTIES;

MODULATION DOPING;

SEMICONDUCTING FILMS;

EID: 0034226830     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00872-5     Document Type: Article

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