Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates

Applied Physics Letters

Volumn 85, Issue 13, 2004, Pages 2514-2516

  Sawano, K ^a   Koh, S ^a   Shiraki, Y ^a   Ozawa, Y ^b   Hattori, T ^b   Yamanaka, J ^c   Suzuki, K ^c   Arimoto, K ^c   Nakagawa, K ^c   Usami, N ^d  

^a UNIVERSITY OF TOKYO   (Japan)

^b TOKYO CITY UNIVERSITY   (Japan)

^c UNIVERSITY OF YAMANASHI   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; MOLECULAR BEAM EPITAXY; NUCLEATION; RAMAN SPECTROSCOPY; RELAXATION PROCESSES; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; STRAIN; SURFACE ROUGHNESS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY (XTEM); SIGE-ON-INSULATOR (SGOI); SOLID SOURCE MOLECULAR BEAM EPITAXY (SSMBE); STRAIN RELAXATION; THREADING DISLOCATION (TD);

HETEROJUNCTIONS;

EID: 7544227801     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1794353     Document Type: Article

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