Low-temperature microcrystalline silicon film deposited by high-density and low-potential plasma technique using hydrogen radicals

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 12, 2004, Pages 7929-7933

  Kirimura, Hiroya ^a   Kubota, Kiyoshi ^a   Takahashi, Eiji ^a   Kishida, Shigeaki ^a   Ogata, Kiyoshi ^a   Uraoka, Yukiharu ^b   Fuyuki, Takashi ^b  

^a NISSIN ELECTRIC CO LTD   (Japan)

^b NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Atomic hydrogen; Microcrystalline silicon; Nucleation; Silane plasma; TFT mobility

Indexed keywords

ELECTRON MOBILITY; EXCIMER LASERS; HYDROGEN; NUCLEATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; RAMAN SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC HYROGEN; MICROCRYSTALLINE SILICON; SILANE PLASMA; THIN FILM TRANSISTORS (TFT) MOBILITY;

SILICON;

EID: 13644274757     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.7929     Document Type: Article

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