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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 5 A, 2006, Pages 4083-4086

Origins of parasitic emissions from 353 nm AlGaN-based ultraviolet light emitting diodes over SiC substrates

(6) Park, Ji Soo a Fothergill, Daryl W a Wellenius, Patrick a Bishop, Seann M a Muth, John F a Davis, Robert F a

a North Carolina State University (United States)

Author keywords

AlGaN; Carrier blocking layer; Light emitting diode; Parasitic emission; Ultraviolet

Indexed keywords

ALUMINUM COMPOUNDS; GALLIUM NITRIDE; LUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE; SUBSTRATES; ULTRAVIOLET RADIATION;

ALGAN; CARRIER BLOCKING LAYER; DEFECT-RELATED LUMINESCENCE; PARASITIC EMISSION;

LIGHT EMITTING DIODES;

EID: 33646883047 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.4083 Document Type: Article

Times cited : (17)

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