Critical Mg doping on the blue-light emission in p-type GaN thin films grown by metal-organic chemical-vapor deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 1, 2003, Pages 134-139

  Kim, Keunjoo ^a   Harrison, Joseph G ^b  

^a Chonbuk National University   (South Korea)

^b UNIVERSITY OF ALABAMA AT BIRMINGHAM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; BINDING ENERGY; LIGHT EMISSION; MAGNESIUM PRINTING PLATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOCURRENTS; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING;

BLUE LIGHT EMISSION; SHALLOW DONOR; THERMAL ANNEALING;

GALLIUM NITRIDE;

EID: 0037273395     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1524148     Document Type: Article

References (24)

1. S. Nakamura, M. Senoh, and T. Mukai, Appl. Phys. Lett. 62, 2390 (1993).
2. H. Morkoç, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994).
3. H. Amano, T. Asahi, M. Kito, and I. Akasaki, J. Lumin. 48, 889 (1991).
4. H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 28, L212 (1989).
5. S. Nakamura, N. Iwawa, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys., Part 1 31, 1258 (1992).
6. J. A. Van Vechten, J. D. Zook, R. D. Hornig, and B. Goldenberg, Jpn. J. Appl. Phys., Part 1 31, 3662 (1992).
7. T. Tanaka, A. Watanabe, A. Amano, Y. Kohayashi, I. Akasaki, S. Yamazaki, and M. Koike, Appl. Phys. Lett. 65, 593 (1994).
8. M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, A. Salvador, B. N. Sverdlov, A. Sverdlov, A. Botchkarev, H. Morkoc, and B. Goldenburg, Appl. Phys. Lett. 137, 1639 (1996).
9. C. H. Qiu and J. I. Pankove, Appl. Phys. Lett. 70, 1983 (1997).
10. K. Kim and S. J. Chung, Appl. Phys. Lett. 80, 1767 (2002).
11. U. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. Schlotter, Appl. Phys. Lett. 72, 1326 (1998).
12. J. S. Colton and P. Y. Yu, Appl. Phys. Lett. 78, 2500 (2001).
13. P. Vennegues, M. Benaissa, B. Beaumont, E. Feltin, P. De Mierry, S. Dalmasso, M. Leroux, and P. Gibart, Appl. Phys. Lett. 77, 880 (2000).
14. K. Kim, H. S. Kim, and H. J. Lee, J. Solid State Electrochem. 3, 417 (1999).
15. A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. S. Usikov, N. M. Shmidt, and W. V. Lundin, Solid-State Electron. 45, 255 (2001).
16. A. Y. Poyakov, A. V. Govorkov, N. B. Smirnov, A. E. Nikolaev, I. P. Nikitina, and V. A. Dmitriev, Solid-State Electron. 45, 261 (2001).
17. J. Chevallier, B. Clerjaud, and B. Pajeot, in Semiconductors and Semimetals, edited by J. I. Pankove N. M. Johnson (Academic, New York, 1991), Vol. 34.
18. S. M. Myers, A. F. Wright, G. A. Peterson, C. H. Seager, W. R. Wampler, M. H. Crawford, and J. Han, J. Appl. Phys. 88, 4676 (2000).
19. G. S. Sudhir, Y. Peyrot, J. Kruger, Y. Kim, R. Kockenbrink, C. Kisielowski, M. D. Rubin, and E. R. Weber, Mater. Res. Soc. Symp. Proc. 482, 525 (1997).
20. Q. Zhu, H. Nagai, Y. Kawaguchi, K. Hiramatsu, and N. Sawaki, J. Vac. Sci. Technol. A 18, 261 (2000).
21. S. Fisher, C. Wetzel, E. E. Haller, and B. K. Meyer, Appl. Phys. Lett. 67, 1298 (1995).
22. T. Yamamoto and H. Katayama-Yoshida, Jpn. J. Appl. Phys., Part 2 28, L2112 (1997).
23. D. J. Chadi, Appl. Phys. Lett. 71, 2970 (1997).
24. T. Matilla and R. M. Nieminen, Phys. Rev. B 55, 9571 (1997).