Aluminum, oxide, and silicon phonons by inelastic electron tunneling spectroscopy on metal-oxide-semiconductor tunnel junctions: Accurate determination and effect of electrical stress

Journal of Applied Physics

Volumn 96, Issue 9, 2004, Pages 5042-5049

  Petit, C ^a   Salace, G ^a   Vuillaume, D ^b  

^a UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; GATES (TRANSISTOR); MOLECULAR VIBRATIONS; MOS DEVICES; OXIDATION; PHONONS; SILICA; SPECTROSCOPIC ANALYSIS; SUBSTRATES;

ELECTRICAL STRESS; INELASTIC ELECTRICAL TUNNELLING SPECTROSCOPY (IETS); MAGNONS; TUNNELLING TRANSPORT;

TUNNEL JUNCTIONS;

EID: 9744244220     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1775299     Document Type: Article

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