Weak anti-localization of the two-dimensional electron gas in modulation-doped AlxGa1-xN/GaN heterostructures with two subbands occupation

Applied Physics Letters

Volumn 85, Issue 15, 2004, Pages 3125-3127

  Lu, J ^a   Shen, B ^a   Tang, N ^a   Chen, D J ^a   Zhao, H ^a   Liu, D W ^a   Zhang, R ^a   Shi, Y ^a   Zheng, Y D ^a   Qiu, Z J ^b   Gui, Y S ^b   Zhu, B ^b   Yao, W ^b   Chu, J H ^b   Hoshino, K ^c   Arakawa, Y ^c  

^a NANJING UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELASTICITY; HETEROJUNCTIONS; INTERFACES (MATERIALS); MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; OSCILLATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

INTERSUBBAND SCATTERING; SDH OSCILLATIONS; TWO-DIMENSIONAL ELECTRON GAS (2DEG); VAN DER PAUW-HALL MEASUREMENTS;

ELECTRON GAS;

EID: 8644230206     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1803949     Document Type: Article

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