Multisubband transport of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures

Journal of Applied Physics

Volumn 93, Issue 3, 2003, Pages 1651-1655

  Zheng, Z W ^a,b   Shen, B ^a   Jiang, C P ^b   Gui, Y S ^b   Someya, T ^c   Zhang, R ^a   Shi, Y ^a   Zheng, Y D ^a   Guo, S L ^b   Chu, J H ^b   Arakawa, Y ^c  

^a NANJING UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; GALLIUM NITRIDE; HETEROJUNCTIONS; MAGNETIC FIELD EFFECTS; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

OPTICAL PHONONS;

ELECTRON GAS;

EID: 0037320196     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1536720     Document Type: Article

References (22)

1. Z. W. Zheng et al., Phys. Rev. B 62, R7739 (2000).
2. L. Hsu and W. Walukiewicz, Phys. Rev. B 56, 1520 (1999).
3. B. Shen, T. Someya, and Y. Arakawa, Appl. Phys. Lett. 76, 2746 (2000).
4. A. G. old, Phys. Rev. B 46, 2339 (1992).
5. S. Das. Sarma and F. Stern, Phys. Rev. B 32, 8442 (1985).
6. Y. S. Gui, S. L. Guo, G. Z. Zheng, J. H. Chu, X. H. Fan, K. Qin, and X. W. Wang, Appl. Phys. Lett. 76, 1309 (2000).
7. J. W. McClure, Phys. Rev. 101, 1642 (1956).
8. W. A. Beck and J. R. Anderson, J. Appl. Phys. 62, 541 (1987).
9. W. A. Beck, R. A. Wilson, and A. C. Goldberg, J. Cryst. Growth 81, 136 (1987).
10. C. Colvar, N. Nouri, and H. Lee, J. Electrochem. Soc. 136, 3463 (1987).
11. J. R. Meyer, C. A. Hoffman, F. J. Bartoli, D. A. Arnold, S. Sivananthan, and J. P. Faurie, Semicond. Sci. Technol. 8, 805 (1993).
12. J. Antoszewski and L. Faraone, J. Appl. Phys. 80, 3881 (1996).
13. P. M. Asbeck, E. T. Yu, S. S. Lan, G. J. Sullivan, J. Van Hove, and J. Redwing, Electron. Lett. 33, 1230 (1997).
14. J. Antoszewski, M. Gracey, J. M. Dell, L. Faraone, T. A. Fisher, G. Parish, Y.-F. Wu, and U. K. Mishra, J. Appl. Phys. 87, 3900 (2000).
15. Y. J. Wang, R. Kaplan, H. K. Ng, K. Doverspike, D. K. Gasill, T. Ikedo, I. Akasaki, and H. Amono, J. Appl. Phys. 79, 8007 (1996).
16. T. Englert, J. C. Maan, D. C. Tsui, and A. C. Gossard, Solid State Commun. 45, 989 (1983).
17. H. L. Störmer, A. C. Gossard, and W. Wiegmann, Solid State Commun. 41, 707 (1982).
18. S. Mori and T. Ando, Phys. Rev. B 19, 6433 (1979).
19. T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).
20. P. T. Coleridge, Semicond. Sci. Technol. 5, 961 (1990).
21. T. H. Sander, S. N. Holmes, J. J. Harris, D. K. Maude, and J. C. Portal, Phys. Rev. B 58, 13856 (1998).
22. M. E. Raikh and T. V. Shahbazyan, Phys. Rev. B 49, 5531 (1994).