High-performance double delta-doped sheets Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic heterostructure transistors

Semiconductor Science and Technology

Volumn 15, Issue 1, 2000, Pages 1-6

  Chang, Wen Lung ^a   Pan, Hsi Jen ^a   Wang, Wei Chou ^a   Thei, Kong Beng ^a   Yu, Kuo Hui ^a   Lin, Kun Wei ^a   Cheng, Chin Chuan ^a   Lour, Wen Shiung ^b   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ENERGY GAP; GATES (TRANSISTOR); HETEROJUNCTIONS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

POWER ADDED EFFICIENCY (PAE); PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (PHEMT);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033639616     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/1/301     Document Type: Article

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